(Hong Kong)
Product Summary
The 2SK2611 is a mos type, high voltage switching transistor. Its applications include dc-dc coverter, replay drive and motor drive applications.
Parametrics
2SK2611 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 900V; (2)Drain-Gate Voltage(RGS=20K) DGR: 900V; (3)Gate-Source Voltage,VGSS: ±30V; (4)DC, ID: 9A; (5)Drain Current, Pulse IDP: 27A; (6)Drain Power Dissipationg(Tc=25C), PD: 150W; (7)Single Pulse Avalanche Energy, EAS: 663mJ; (8)Avalanche Current, IAR: 9A; (9)
Repetitive Avalanche Energy, EAR: 15mJ; (10)Channel Temperature, Tch: 150℃.
Features
2SK2611 features: (1)low drain-source on resistance: 1.1Ω; (2)high forward transfer admittance: 7S; (3)low leakage current: 100μA; (4)Enhancement mode: 2 to 4V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 2SK2611 |
Other |
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Data Sheet |
Negotiable |
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2SK2611(F,T) |
Toshiba |
MOSFET MOSFET N-Ch 900V 9A Rdson 1.4 Ohm |
Data Sheet |
Negotiable |
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