HYB25D256160CE-6

Product Summary

HYB25D256160CE-6,The 256MbitDouble-Data-RateSDRAM is a high-speed CMOS, dynamic random-access memory containing
268,435,456bits. It is internally configured as a quad-bank DRAM.
HYB25D256160CE-6,The 256MbitDouble-Data-RateSDRAM uses a double-data-rate architecture to achieve high-speed operation.
The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer
two data words per clock cycle at the I/O pins. A single read or write access for the
256MbitDouble-Data-RateSDRAM effectively consists of a single 2n-bit wide, one clock cycle data transfer at
HYB25D256160CE-6,the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.

Parametrics

Part Number Speed Code –5 –6 –7 Unit
Speed Grade Component DDR400B DDR333 DDR266A —
Module PC3200-3033 PC2700–2533 PC2100-2033 —
max. Clock Frequency @CL3 fCK3 200 166 — MHz
@CL2.5 fCK2.5 166 166 143 MHz
@CL2 fCK2 133 133 133 MHz

Features

Double data rate architecture: two data transfers per clock cycle
1.Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the
receiver
2.DQS is edge-aligned with data for reads and is center-aligned with data for writes
3.Differential clock inputs (CK and CK)
4.Four internal banks for concurrent operation
5.Data mask (DM) for write data
6.DLL aligns DQ and DQS transitions with CK transitions
7.Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
8.Burst Lengths: 2, 4, or 8
9.CAS Latency: 1.5 (DDR200 only), 2, 2.5, 3
10.Auto Precharge option for each burst access
11.Auto Refresh and Self Refresh Modes
12.RAS-lockout supported tRAP=tRCD
13.7.8 μs Maximum Average Periodic Refresh Interval
14.2.5V (SSTL_2 compatible) I/O
15.VDDQ = 2.5V ± 0.2V (DDR200, DDR266, DDR333); VDDQ = 2.6V ± 0.1V (DDR400)
16. VDD = 2.5V ± 0.2V (DDR200, DDR266, DDR333); VDD = 2.6V ± 0.1V (DDR400)
17.P-TFBGA-60-12 package with 3 depopulated rows (8 × 12mm2)
18.P-TSOPII-66 package
19.Lead- and halogene-free = green product

Diagrams